MOSFET

IGT60R190D1SATMA1

Enhancement-Mode Power GaN Transistor

Infineon Technologies AG

제품 기술 사양

• RoHS (Unione Europea)

  Compliant with Exemption

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Obsolete

• Codice HTS

  8541.29.00.55

• SVHC

  Yes

• Tasso di SVHC superiore ai limiti consentiti

  Yes

• Automotive

  No

• PPAP

  No

• Number of Elements per Chip

  1

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  2.3

• Package Width

  10.38

• Package Length

  9.9

• PCB changed

  8

• Tab

  Tab

• Standard Package Name

  SO

• Supplier Package

  HSOF

• Pin Count

  9