MOSFET

IAUCN08S7L018ATMA1

Trans MOSFET N-CH 80V 210A T/R Automotive AEC-Q101

Infineon Technologies AG

제품 기술 사양

• RoHS (Unione Europea)

  Compliant with Exemption

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• SVHC

  Yes

• Tasso di SVHC superiore ai limiti consentiti

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single Quad Drain Triple Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  80

• Maximum Gate-Source Voltage (V)

  ±20

• Operating Junction Temperature (°C)

  -55 to 175

• Maximum Continuous Drain Current (A)

  210

• Maximum Drain-Source Resistance (mOhm)

  1.8@10V

• Typical Gate Charge @ Vgs (nC)

  79.9@10V

• Typical Gate Charge @ 10V (nC)

  79.9

• Typical Input Capacitance @ Vds (pF)

  4885@40V

• Maximum Power Dissipation (mW)

  169000

• Typical Fall Time (ns)

  25

• Typical Rise Time (ns)

  11

• Typical Turn-Off Delay Time (ns)

  58.5

• Typical Turn-On Delay Time (ns)

  9.4

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive