제품 기술 사양
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Process Technology
0.18um to 2um
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
25
Maximum Gate-Source Voltage (V)
-8
Maximum Gate Threshold Voltage (V)
1.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
0.46
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
1100@4.5V
Typical Gate Charge @ Vgs (nC)
1.1@4.5V
Typical Gate Charge @ 10V (nC)
1.1
Typical Gate to Drain Charge (nC)
0.25
Typical Gate to Source Charge (nC)
0.32
Typical Input Capacitance @ Vds (pF)
63@10V
Typical Reverse Transfer Capacitance @ Vds (pF)
10@10V
Minimum Gate Threshold Voltage (V)
0.65
Typical Output Capacitance (pF)
34
Maximum Power Dissipation (mW)
350
Typical Fall Time (ns)
35
Typical Rise Time (ns)
8
Typical Turn-Off Delay Time (ns)
55
Typical Turn-On Delay Time (ns)
7
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
870@4.5V|1220@2.7V
Maximum Pulsed Drain Current @ TC=25°C (A)
1.5
Typical Diode Forward Voltage (V)
0.89
Typical Gate Plateau Voltage (V)
2
Maximum Diode Forward Voltage (V)
1.2
Typical Gate Threshold Voltage (V)
0.86
Mounting
Surface Mount
Package Height
0.94
Package Width
1.3
Package Length
2.9
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23
Pin Count
3
Lead Shape
Gull-wing
주문 수량