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RoHS (Unione Europea)
Compliant
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Dual Dual Drain
Process Technology
0.35um to 2um
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
ยฑ20
Maximum Gate Threshold Voltage (V)
2.5
Operating Junction Temperature (ยฐC)
-55 to 150
Maximum Continuous Drain Current (A)
7
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
23@10V
Typical Gate Charge @ Vgs (nC)
9.2@10V
Typical Gate Charge @ 10V (nC)
9.2
Typical Gate to Drain Charge (nC)
2
Typical Gate to Source Charge (nC)
1.5
Typical Input Capacitance @ Vds (pF)
475@15V
Typical Reverse Transfer Capacitance @ Vds (pF)
65@15V
Minimum Gate Threshold Voltage (V)
1.2
Typical Output Capacitance (pF)
100
Maximum Power Dissipation (mW)
1600
Typical Fall Time (ns)
21
Typical Rise Time (ns)
9
Typical Turn-Off Delay Time (ns)
42
Typical Turn-On Delay Time (ns)
5
Minimum Operating Temperature (ยฐC)
-55
Maximum Operating Temperature (ยฐC)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25ยฐC (mOhm)
19@10V, 24@4.5V
Maximum Pulsed Drain Current @ TC=25ยฐC (A)
30
Maximum Junction Ambient Thermal Resistance on PCB (ยฐC/W)
135
Typical Diode Forward Voltage (V)
0.9
Typical Gate Plateau Voltage (V)
3
Maximum Diode Forward Voltage (V)
1.25
Typical Gate Threshold Voltage (V)
1.7
Maximum Gate Resistance (Ohm)
1.6
Maximum Positive Gate-Source Voltage (V)
20
Maximum Continuous Drain Current on PCB @ TC=25ยฐC (A)
7
Mounting
Surface Mount
Package Height
1.5(Max)
Package Width
3.9
Package Length
4.9
PCB changed
8
Standard Package Name
SO
Supplier Package
SOIC
Pin Count
8
Lead Shape
Gull-wing
Family/Series
FDS8984
ROHS Version
2011/65/EU, 2015/863
Quantity Packaging
2500
MSL
1
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