MOSFET

FDMC86520L

Trans MOSFET N-CH Si 60V 13.5A 8-Pin WDFN EP T/R

onsemi

제품 기술 사양

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  COMPONENTS

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single Quad Drain Triple Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  60

• Maximum Gate-Source Voltage (V)

  ±20

• Operating Junction Temperature (°C)

  -55 to 150

• Maximum Continuous Drain Current (A)

  13.5

• Maximum Drain-Source Resistance (mOhm)

  7.9@10V

• Typical Gate Charge @ Vgs (nC)

  21@4.5V, 45@10V

• Typical Gate Charge @ 10V (nC)

  45

• Typical Input Capacitance @ Vds (pF)

  3420@30V

• Maximum Power Dissipation (mW)

  2300

• Typical Fall Time (ns)

  3.4

• Typical Rise Time (ns)

  5.2

• Typical Turn-Off Delay Time (ns)

  32

• Typical Turn-On Delay Time (ns)

  15

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.73

• Package Width

  3.3

• Package Length

  3.3

• PCB changed

  8

• Standard Package Name

  DFN

• Supplier Package

  WDFN EP

• Pin Count

  8

• Lead Shape

  No Lead