MOSFET

FDMC8360L

Trans MOSFET N-CH 40V 27A 8-Pin WDFN EP T/R

onsemi

제품 기술 사양

• 欧盟RoHS指令

  Compliant with Exemption

• 美国出口管制分类ECCN编码

  EAR99

• 环保无铅

  Active

• 美国海关商品代码

  8541.29.00.55

• SVHC

  Yes

• SVHC超标

  Yes

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single Quad Drain Triple Source

• Process Technology

  0.35um to 2um

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  40

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  3

• Maximum Continuous Drain Current (A)

  27

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  2.1@10V

• Typical Gate Charge @ Vgs (nC)

  26@4.5V|57@10V

• Typical Gate Charge @ 10V (nC)

  57

• Typical Input Capacitance @ Vds (pF)

  4140@20V

• Maximum Power Dissipation (mW)

  2300

• Typical Fall Time (ns)

  5.3

• Typical Rise Time (ns)

  6.7

• Typical Turn-Off Delay Time (ns)

  38

• Typical Turn-On Delay Time (ns)

  15

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.75(Max) mm

• Package Width

  3.3 mm

• Package Length

  3.3 mm

• PCB changed

  8

• Standard Package Name

  DFN

• Supplier Package

  WDFN EP

• Pin Count

  8

• Lead Shape

  No Lead