์ ํ ๊ธฐ์ ์ฌ์
์ ๋ฝ ์ฐํฉ RoHS ๋ช ๋ น์ด
Compliant
๋ฏธ๊ตญ์์ถํต์ ๋ถ๋ฅECCN ์ธ์ฝ๋ฉ
EAR99
์นํ๊ฒฝ ๋ฌด์ฐ
Active
๋ฏธ๊ตญ ์ธ๊ด ์ํ ์ฝ๋
8541.29.00.95
SVHC
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
ยฑ20
Maximum Gate Threshold Voltage (V)
1.9
Operating Junction Temperature (ยฐC)
-55 to 150
Maximum Continuous Drain Current (A)
20
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
7.3@10V
Typical Gate Charge @ Vgs (nC)
7.9@4.5V|17.1@10V
Typical Gate Charge @ 10V (nC)
17.1
Typical Gate to Drain Charge (nC)
1.7
Typical Gate to Source Charge (nC)
3.3
Typical Reverse Recovery Charge (nC)
4.4
Typical Input Capacitance @ Vds (pF)
1150@15V
Typical Reverse Transfer Capacitance @ Vds (pF)
56@15V
Minimum Gate Threshold Voltage (V)
1.1
Typical Output Capacitance (pF)
134
Maximum Power Dissipation (mW)
2500
Typical Fall Time (ns)
1
Typical Rise Time (ns)
6
Typical Turn-Off Delay Time (ns)
13
Typical Turn-On Delay Time (ns)
2
Minimum Operating Temperature (ยฐC)
-55
Maximum Operating Temperature (ยฐC)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25ยฐC (mOhm)
6.3@10V|8.2@4.5V
Maximum Power Dissipation on PCB @ TC=25ยฐC (W)
2.5
Maximum Pulsed Drain Current @ TC=25ยฐC (A)
142
Maximum Junction Ambient Thermal Resistance on PCB (ยฐC/W)
60
Typical Diode Forward Voltage (V)
0.8
Typical Gate Plateau Voltage (V)
2.8
Typical Reverse Recovery Time (ns)
6
Maximum Diode Forward Voltage (V)
1
Typical Gate Threshold Voltage (V)
1.5
Maximum Gate Resistance (Ohm)
3.6
Maximum Positive Gate-Source Voltage (V)
20
Maximum Continuous Drain Current on PCB @ TC=25ยฐC (A)
14
Mounting
Surface Mount
Package Width
3.1(Max)
Package Length
3.25(Max)
PCB changed
8
Standard Package Name
SON
Supplier Package
VSONP EP
Pin Count
8

