BT158W1200TQ|WEEN|limage
BT158W1200TQ|WEEN|simage
Dev Kit

BT158W-1200TQ

SCR Diode 1200V 126A(RMS) 1210A 3-Pin(3+Tab) TO-247 Tube

WeEn Semiconductors Co., Ltd
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제품 기술 사양
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • Automotive
    No
  • PPAP
    No
  • Maximum Rate of Rise of Off-State Voltage (V/us)
    1500(Min)
  • Maximum Rate of Rise of On-State Current (A/us)
    150
  • Maximum Gate Trigger Voltage (V)
    1
  • Maximum Gate Trigger Current (mA)
    70
  • Surge Current Rating (A)
    1210
  • Maximum Holding Current (mA)
    200
  • Repetitive Peak Reverse Voltage (V)
    1200
  • Maximum Gate Peak Inverse Voltage (V)
    5
  • Peak On-State Voltage (V)
    1.65@160A
  • Repetitive Peak Forward Blocking Voltage (V)
    1200
  • Rated Average On-State Current (A)
    80
  • RMS On-State Current (A)
    126
  • Repetitive Peak Off-State Current (mA)
    3
  • Maximum Latching Current (mA)
    300
  • Peak Gate Power Dissipation (W)
    20
  • Average Gate Power Dissipation (W)
    1
  • Circuit Fusing Consideration (A²S)
    6115
  • Phase Control
    No
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Through Hole
  • Package Height
    21.1(Max)
  • Package Width
    5.2(Max)
  • Package Length
    15.9(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Supplier Package
    TO-247
  • Pin Count
    3

문서 및 자료

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