MOSFET

BSS138BKT116

Trans MOSFET N-CH 60V 0.4A 3-Pin SST T/R

ROHM Semiconductor

제품 기술 사양

• 유럽 연합 RoHS 명령어

  Compliant

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  Active

• Automotive

  No

• PPAP

  No

• Category

  Small Signal

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  60

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Continuous Drain Current (A)

  0.4

• Maximum Gate-Source Leakage Current (nA)

  10000

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  680@10V

• Typical Input Capacitance @ Vds (pF)

  47@30V

• Maximum Power Dissipation (mW)

  350

• Typical Fall Time (ns)

  22

• Typical Rise Time (ns)

  5.2

• Typical Turn-Off Delay Time (ns)

  17

• Typical Turn-On Delay Time (ns)

  4.6

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  1.15(Max)

• Package Width

  1.5(Max)

• Package Length

  3.1(Max)

• PCB changed

  3

• Standard Package Name

  SOT

• Supplier Package

  SST

• Pin Count

  3

• Lead Shape

  Gull-wing