제품 기술 사양
RoHS (Unión Europea)
Compliant
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Active
Código HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Dual
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
22
Maximum Gate Threshold Voltage (V)
4
Maximum Continuous Drain Current (A)
80
Maximum Gate-Source Leakage Current (nA)
500
Maximum IDSS (uA)
1200
Typical Input Capacitance @ Vds (pF)
8000@10V
Maximum Power Dissipation (mW)
600000
Typical Fall Time (ns)
40
Typical Rise Time (ns)
30
Typical Turn-Off Delay Time (ns)
80
Typical Turn-On Delay Time (ns)
20
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
175
Packaging
Tray
Mounting
Screw
Package Height
16
Package Width
45.6
Package Length
122
PCB changed
10
Pin Count
10