MOSFET

BSC009NE2LSATMA1

Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R

Infineon Technologies AG

제품 기술 사양

• 유럽 연합 RoHS 명령어

  Compliant with Exemption

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  Active

• 미국 세관 상품 코드

  COMPONENTS

• SVHC

  Yes

• SVHC 기준 초과

  Yes

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single Quad Drain Triple Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  25

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  2.2

• Maximum Continuous Drain Current (A)

  41

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  10

• Maximum Drain-Source Resistance (mOhm)

  0.9@10V

• Typical Gate Charge @ Vgs (nC)

  72@4.5V|126@10V

• Typical Gate Charge @ 10V (nC)

  126

• Typical Input Capacitance @ Vds (pF)

  5800@12V

• Maximum Power Dissipation (mW)

  2500

• Typical Fall Time (ns)

  19

• Typical Rise Time (ns)

  33

• Typical Turn-Off Delay Time (ns)

  48

• Typical Turn-On Delay Time (ns)

  10

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  0.75@10V|1@4.5V

• Mounting

  Surface Mount

• Package Height

  1

• Package Width

  5.9

• Package Length

  5.15

• PCB changed

  8

• Standard Package Name

  SON

• Supplier Package

  TDSON EP

• Pin Count

  8

• Lead Shape

  No Lead