제품 기술 사양
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
EA
Automotive
Unknown
PPAP
Unknown
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.6
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
12
Maximum Drain-Source Resistance (mOhm)
11@10V
Typical Gate Charge @ Vgs (nC)
12.5@4.5V|25@10V
Typical Gate Charge @ 10V (nC)
25
Typical Input Capacitance @ Vds (pF)
1725@50V
Typical Output Capacitance (pF)
360
Maximum Power Dissipation (mW)
3100
Typical Fall Time (ns)
3.5
Typical Rise Time (ns)
3
Typical Turn-Off Delay Time (ns)
23
Typical Turn-On Delay Time (ns)
8.5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
Industrial
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
9.2@10V|11.7@4.5V
Mounting
Surface Mount
Package Height
1.5
Package Width
3.9
Package Length
4.9
PCB changed
8
Standard Package Name
SO
Supplier Package
SOIC
Pin Count
8
Lead Shape
Gull-wing
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