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2N7002ET1E3|VISHAY|simage
2N7002ET1E3|VISHAY|limage
MOSFET

2N7002E-T1-E3

Trans MOSFET N-CH 60V 0.24A 3-Pin SOT-23 T/R

Vishay
데이터시트 

제품 기술 사양
  • RoHS (Unión Europea)
    Compliant
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Obsolete
  • Código HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.5
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    0.24
  • Maximum Gate-Source Leakage Current (nA)
    10
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    3000@10V
  • Typical Gate Charge @ Vgs (nC)
    0.4@4.5V
  • Typical Gate to Drain Charge (nC)
    0.06
  • Typical Gate to Source Charge (nC)
    0.06
  • Typical Input Capacitance @ Vds (pF)
    21@5V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    2.5@5V
  • Minimum Gate Threshold Voltage (V)
    1
  • Typical Output Capacitance (pF)
    7
  • Maximum Power Dissipation (mW)
    350
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    1.3
  • Typical Diode Forward Voltage (V)
    0.85
  • Maximum Diode Forward Voltage (V)
    1.2
  • Typical Gate Threshold Voltage (V)
    2
  • Mounting
    Surface Mount
  • Package Height
    1.02(Max)
  • Package Width
    1.4(Max)
  • Package Length
    3.04(Max)
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23
  • Pin Count
    3
  • Lead Shape
    Gull-wing

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