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MOSFET

2N7000-G

Trans MOSFET N-CH Si 60V 0.2A 3-Pin TO-92 Bag

Microchip Technology
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  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ยฑ30
  • Maximum Gate Threshold Voltage (V)
    3
  • Maximum Continuous Drain Current (A)
    0.2
  • Maximum Drain-Source Resistance (mOhm)
    5000@10V
  • Typical Input Capacitance @ Vds (pF)
    60(Max)@25V
  • Typical Output Capacitance (pF)
    25(Max)
  • Maximum Power Dissipation (mW)
    1000
  • Minimum Operating Temperature (ยฐC)
    -55
  • Maximum Operating Temperature (ยฐC)
    150
  • Packaging
    Bag
  • Mounting
    Through Hole
  • Package Height
    5.33(Max)
  • Package Width
    4.19(Max)
  • Package Length
    5.21(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-92
  • Pin Count
    3
  • Lead Shape
    Formed
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