GP BJT

2N5686

Trans GP BJT NPN 80V 50A 300000mW 3-Pin(2+Tab) TO-3 Tray

Microchip Technology

제품 기술 사양

• 유럽 연합 RoHS 명령어

  Not Compliant

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  Active

• 미국 세관 상품 코드

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  80

• Maximum Collector-Emitter Voltage (V)

  80

• Maximum Base-Emitter Voltage (V)

  5

• Maximum Base-Emitter Saturation Voltage (V)

  2@2.5A@25A

• Maximum Collector-Emitter Saturation Voltage (V)

  1@2.5A@25A|5@10A@50A

• Maximum DC Collector Current (A)

  50

• Minimum DC Current Gain

  30@5A@2V|15@25A@2V|5@50A@5V

• Maximum Power Dissipation (mW)

  300000

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  200

• Packaging

  Tray

• Mounting

  Through Hole

• Package Height

  7.92

• Package Width

  26.42

• Package Length

  39.29

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-3

• Pin Count

  3

• Lead Shape

  Through Hole