GP BJT

2N5681

Trans GP BJT NPN 100V 1A 1000mW 3-Pin TO-39 Bag

Microchip Technology

제품 기술 사양

• 유럽 연합 RoHS 명령어

  Not Compliant

• 미국수출통제분류ECCN 인코딩

  EAR99

• 친환경 무연

  Active

• 미국 세관 상품 코드

  8541.10.00.80

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  100

• Maximum Collector-Emitter Voltage (V)

  100

• Maximum Base-Emitter Voltage (V)

  4

• Maximum Base-Emitter Saturation Voltage (V)

  1.1@25mA@250mA|1.3@50mA@500mA

• Maximum Collector-Emitter Saturation Voltage (V)

  0.6@25mA@250mA|1@50mA@500mA

• Maximum DC Collector Current (A)

  1

• Minimum DC Current Gain

  40@0.25A@2V|20@500mA@2V|5@1A@2V

• Maximum Power Dissipation (mW)

  1000

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Packaging

  Bag

• Diameter

  9.4(Max)

• Mounting

  Through Hole

• Package Height

  6.6(Max)

• PCB changed

  3

• Standard Package Name

  TO

• Supplier Package

  TO-39

• Pin Count

  3

• Lead Shape

  Through Hole