2N5416PBFREE|CNTRSEMI|simage
2N5416PBFREE|CNTRSEMI|limage
GP BJT

2N5416 PBFREE

Trans GP BJT PNP 300V 1A 1000mW 3-Pin TO-39 Box

Central Semiconductor
데이터시트 

제품 기술 사양
  • 유럽 연합 RoHS 명령어
    Compliant
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    Active
  • 미국 세관 상품 코드
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Type
    PNP
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    350
  • Maximum Collector-Emitter Voltage (V)
    300
  • Maximum Base-Emitter Voltage (V)
    6
  • Operating Junction Temperature (°C)
    -65 to 200
  • Maximum Base Current (A)
    0.5
  • Maximum Base-Emitter Saturation Voltage (V)
    1.5@5mA@50mA
  • Maximum Collector-Emitter Saturation Voltage (V)
    2@5mA@50mA
  • Maximum DC Collector Current (A)
    1
  • Maximum Collector Cut-Off Current (nA)
    50000
  • Minimum DC Current Gain
    30@50mA@10V
  • Maximum Power Dissipation (mW)
    1000
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Packaging
    Box
  • Diameter
    8.96
  • Mounting
    Through Hole
  • Package Height
    6.35
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-39
  • Pin Count
    3
  • Lead Shape
    Through Hole

문서 및 자료

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