GP BJT

2N2369A

Trans GP BJT NPN 15V 500mW 3-Pin TO-18 Bag

Microchip Technology

제품 기술 사양

• EU RoHS

  Not Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.21.00.75

• Automotive

  No

• PPAP

  No

• Type

  NPN

• Category

  Bipolar Power

• Material

  Si

• Configuration

  Single

• Number of Elements per Chip

  1

• Maximum Collector-Base Voltage (V)

  40

• Maximum Collector-Emitter Voltage (V)

  15

• Maximum Base-Emitter Voltage (V)

  4.5

• Maximum Base-Emitter Saturation Voltage (V)

  0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA

• Maximum Collector-Emitter Saturation Voltage (V)

  0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA

• Maximum Collector Cut-Off Current (nA)

  10000

• Minimum DC Current Gain

  40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V

• Maximum Power Dissipation (mW)

  500

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  200

• Packaging

  Bag

• Diameter

  5.84(Max)

• Mounting

  Through Hole

• Package Height

  5.33(Max)

• PCB changed

  3

• Standard Package Name

  TO

• Supplier Package

  TO-18

• Pin Count

  3

• Lead Shape

  Through Hole