제품 기술 사양
RoHS (Unión Europea)
Compliant
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Obsolete
Código HTS
8541.29.00.55
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single Dual Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
200
Maximum Gate-Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
580
Maximum Drain-Source Resistance (mOhm)
3.8@10V
Typical Gate Charge @ Vgs (nC)
2750@10V
Typical Gate Charge @ 10V (nC)
2750
Typical Fall Time (ns)
350
Typical Rise Time (ns)
500
Typical Turn-Off Delay Time (ns)
900
Typical Turn-On Delay Time (ns)
210
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
150
Mounting
Screw
Package Height
30
Package Width
62
Package Length
110
PCB changed
4
Supplier Package
Y3-Li
Pin Count
4