제품 기술 사양
RoHS (Unión Europea)
Compliant with Exemption
ECCN (Estados Unidos)
EAR99
Estatus de pieza
LTB
Código HTS
8541.29.00.55
SVHC
Yes
Índice de SEP por encima del límite autorizado
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Single Dual Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
22
Maximum Continuous Drain Current (A)
91
Maximum Drain-Source Resistance (mOhm)
30@18V
Typical Gate Charge @ Vgs (nC)
150@18V
Typical Input Capacitance @ Vds (pF)
3540@800V
Maximum Power Dissipation (mW)
547000
Typical Fall Time (ns)
18
Typical Rise Time (ns)
9
Typical Turn-Off Delay Time (ns)
36
Typical Turn-On Delay Time (ns)
15.5
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
200
Supplier Temperature Grade
Industrial
Packaging
Tube
Mounting
Through Hole
Package Height
21 mm
Package Width
5 mm
Package Length
15.8 mm
PCB changed
4
Tab
Tab
Supplier Package
HIP-247
Pin Count
4