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RS6G120BHTB1|ROHM|simage
RS6G120BHTB1|ROHM|limage
MOSFETs

RS6G120BHTB1

Trans MOSFET N-CH Si 40V 210A 8-Pin HSOP EP

ROHM Semiconductor
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제품 기술 사양
  • RoHS (Unión Europea)
    Compliant
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Active
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    40
  • Maximum Gate-Source Voltage (V)
    ±20
  • Operating Junction Temperature (°C)
    150
  • Maximum Continuous Drain Current (A)
    210
  • Maximum Drain-Source Resistance (mOhm)
    1.38@10V
  • Typical Gate Charge @ Vgs (nC)
    40@6V|67@10V
  • Typical Gate Charge @ 10V (nC)
    67
  • Typical Input Capacitance @ Vds (pF)
    4790@20V
  • Maximum Power Dissipation (mW)
    3000
  • Typical Fall Time (ns)
    56
  • Typical Rise Time (ns)
    36
  • Typical Turn-Off Delay Time (ns)
    80
  • Typical Turn-On Delay Time (ns)
    40
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Surface Mount
  • Package Height
    1.05(Max)
  • Package Width
    5.8(Max)
  • Package Length
    5(Max)
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    HSOP EP
  • Pin Count
    8
  • Lead Shape
    Gull-wing

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