제품 기술 사양
RoHS (Unión Europea)
Compliant with Exemption
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Active
Código HTS
8541.29.00.55
SVHC
Yes
Índice de SEP por encima del límite autorizado
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
40
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3.9
Maximum Continuous Drain Current (A)
123
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
3.3@10V
Typical Gate Charge @ Vgs (nC)
62@10V
Typical Gate Charge @ 10V (nC)
62
Typical Input Capacitance @ Vds (pF)
3183@25V
Maximum Power Dissipation (mW)
99000
Typical Fall Time (ns)
23
Typical Rise Time (ns)
34
Typical Turn-Off Delay Time (ns)
33
Typical Turn-On Delay Time (ns)
11
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
2.6@10V|3.9@6V
Mounting
Through Hole
Package Height
8.7
Package Width
4.2
Package Length
10.16
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220AB
Pin Count
3
Lead Shape
Through Hole