Arrow Electronic Components Online
IRF9362TRPBF|INFINEON|limage
IRF9362TRPBF|INFINEON|simage
MOSFET

IRF9362TRPBF

Trans MOSFET P-CH 30V 8A 8-Pin SOIC N T/R

Infineon Technologies AG
데이터시트 

제품 기술 사양
  • 유럽 연합 RoHS 명령어
    Compliant
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    Obsolete
  • 미국 세관 상품 코드
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Dual Dual Drain
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    8
  • Maximum Drain-Source Resistance (mOhm)
    21@10V
  • Typical Gate Charge @ Vgs (nC)
    13@4.5V|26@10V
  • Typical Gate Charge @ 10V (nC)
    26
  • Typical Input Capacitance @ Vds (pF)
    1300@25V
  • Maximum Power Dissipation (mW)
    2000
  • Typical Fall Time (ns)
    53
  • Typical Rise Time (ns)
    5.9
  • Typical Turn-Off Delay Time (ns)
    115
  • Typical Turn-On Delay Time (ns)
    5.2
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    17@10V|25.7@4.5V
  • Mounting
    Surface Mount
  • Package Height
    1.57(Max)
  • Package Width
    3.99(Max)
  • Package Length
    4.98(Max)
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    SOIC N
  • Pin Count
    8
  • Lead Shape
    Gull-wing

문서 및 자료

데이터시트
디자인 리소스