제품 기술 사양
RoHS (Unión Europea)
Compliant with Exemption
ECCN (Estados Unidos)
EAR99
Estatus de pieza
Active
Código HTS
8541.29.00.55
SVHC
Yes
Índice de SEP por encima del límite autorizado
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4.5
Maximum Continuous Drain Current (A)
32
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
1.65@10V
Typical Gate Charge @ Vgs (nC)
90@8V|110@10V
Typical Gate Charge @ 10V (nC)
110
Typical Input Capacitance @ Vds (pF)
8235@30V
Maximum Power Dissipation (mW)
3300
Typical Fall Time (ns)
11
Typical Rise Time (ns)
27
Typical Turn-Off Delay Time (ns)
42
Typical Turn-On Delay Time (ns)
43
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
1.05(Max)
Package Width
6
Package Length
5
PCB changed
8
Standard Package Name
QFN
Supplier Package
PQFN EP
Pin Count
8
Lead Shape
No Lead