DMN2009USS13|DIODEZTX|simage
DMN2009USS13|DIODEZTX|limage
MOSFET

DMN2009USS-13

Trans MOSFET N-CH 20V 12.1A 8-Pin SO T/R

Diodes Incorporated
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제품 기술 사양
  • 유럽 연합 RoHS 명령어
    Compliant
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    Active
  • 미국 세관 상품 코드
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±12
  • Maximum Continuous Drain Current (A)
    12.1
  • Maximum Drain-Source Resistance (mOhm)
    8@10V
  • Typical Gate Charge @ Vgs (nC)
    16@4.5V|34@10V
  • Typical Gate Charge @ 10V (nC)
    34
  • Typical Input Capacitance @ Vds (pF)
    1706@10V
  • Maximum Power Dissipation (mW)
    2000
  • Typical Fall Time (ns)
    11
  • Typical Rise Time (ns)
    6.2
  • Typical Turn-Off Delay Time (ns)
    25
  • Typical Turn-On Delay Time (ns)
    4.2
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.45
  • Package Width
    3.9
  • Package Length
    4.9
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    SO
  • Pin Count
    8

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