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2N5338PBFREE|CNTRSEMI|limage
2N5338PBFREE|CNTRSEMI|simage
GP BJT

2N5338 PBFREE

Trans GP BJT NPN 100V 5A 6000mW 3-Pin TO-39

Central Semiconductor
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제품 기술 사양
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Small Signal
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    100
  • Maximum Collector-Emitter Voltage (V)
    100
  • Maximum Base-Emitter Voltage (V)
    6
  • Maximum Base-Emitter Saturation Voltage (V)
    1.2@0.2A@2A|1.8@0.5A@5A
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.7@0.2A@2A|1.2@0.5A@5A
  • Maximum DC Collector Current (A)
    5
  • Minimum DC Current Gain
    30@500mA@2V|30@2A@2V|20@5A@2V
  • Maximum Power Dissipation (mW)
    6000
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Diameter
    9.4(Max)
  • Mounting
    Through Hole
  • Package Height
    6.6(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-39
  • Pin Count
    3
  • Lead Shape
    Through Hole

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