Arrow Electronic Components Online
US5U30TR|ROHM|simage
US5U30TR|ROHM|limage
MOSFET

US5U30TR

Trans MOSFET P-CH Si 20V 1A 5-Pin TUMT T/R

ROHM Semiconductor
Schede tecniche 

Specifiche Tecniche del Prodotto
  • RoHS (Unión Europea)
    Compliant
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    NRND
  • Código HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±12
  • Maximum Continuous Drain Current (A)
    1
  • Maximum Drain-Source Resistance (mOhm)
    390@4.5V
  • Typical Gate Charge @ Vgs (nC)
    2.1@4.5V
  • Typical Input Capacitance @ Vds (pF)
    150@10V
  • Maximum Power Dissipation (mW)
    1000
  • Typical Fall Time (ns)
    10
  • Typical Rise Time (ns)
    8
  • Typical Turn-Off Delay Time (ns)
    25
  • Typical Turn-On Delay Time (ns)
    9
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.82(Max)
  • Package Width
    1.8(Max)
  • Package Length
    2.1(Max)
  • PCB changed
    5
  • Standard Package Name
    SOT
  • Supplier Package
    TUMT
  • Pin Count
    5
Quantità Ordine

Documentazione e Risorse

Schede tecniche
Risorse di progettazione