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STH240N10F76|STMICRO|limage
STH240N10F76|STMICRO|simage
MOSFET

STH240N10F7-6

Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) H2PAK T/R

STMicroelectronics
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Specifiche Tecniche del Prodotto
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Hex Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    100
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    4.5
  • Maximum Continuous Drain Current (A)
    180
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    2.5@10V
  • Typical Gate Charge @ Vgs (nC)
    160@10V
  • Typical Gate Charge @ 10V (nC)
    160
  • Typical Input Capacitance @ Vds (pF)
    11550@25V
  • Maximum Power Dissipation (mW)
    300000
  • Typical Fall Time (ns)
    112
  • Typical Rise Time (ns)
    139
  • Typical Turn-Off Delay Time (ns)
    110
  • Typical Turn-On Delay Time (ns)
    49
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Industrial
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    4.7(Max)
  • Package Width
    8.9(Max)
  • Package Length
    10.4(Max)
  • PCB changed
    6
  • Tab
    Tab
  • Supplier Package
    H2PAK
  • Pin Count
    7
  • Lead Shape
    Gull-wing

Documentazione e Risorse

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Risorse di progettazione