Arrow Electronic Components Online
SSM3J56MFVL3FT|TOSHIBA|simage
SSM3J56MFVL3FT|TOSHIBA|limage
MOSFET

SSM3J56MFV,L3F(T

Trans MOSFET P-CH Si 20V 0.8A 3-Pin VESM T/R

Toshiba
Schede tecniche 

Specifiche Tecniche del Prodotto
  • RoHS (Unión Europea)
    Compliant
  • ECCN (Estados Unidos)
    EAR99
  • Estatus de pieza
    Active
  • Automotive
    No
  • PPAP
    No
  • Category
    Small Signal
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±8
  • Maximum Gate Threshold Voltage (V)
    1
  • Maximum Continuous Drain Current (A)
    0.8
  • Maximum Gate-Source Leakage Current (nA)
    1000
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    390@4.5V
  • Typical Gate Charge @ Vgs (nC)
    1.6@4.5V
  • Typical Input Capacitance @ Vds (pF)
    100@10V
  • Maximum Power Dissipation (mW)
    800
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Width
    0.8
  • Package Length
    1.2
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    VESM
  • Pin Count
    3
  • Lead Shape
    Flat

Documentazione e Risorse

Schede tecniche
Risorse di progettazione