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MOSFET

SQ3427AEEV-T1_GE3

Trans MOSFET P-CH 60V 5.3A 6-Pin TSOP T/R Automotive AEC-Q101

Vishay
Schede tecniche 

Specifiche Tecniche del Prodotto
  • 유럽 연합 RoHS 명령어
    Compliant
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    Obsolete
  • 미국 세관 상품 코드
    COMPONENTS
  • Automotive
    Yes
  • PPAP
    Yes
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain
  • Process Technology
    2700nm
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.5
  • Maximum Continuous Drain Current (A)
    5.3
  • Maximum Gate-Source Leakage Current (nA)
    10000000
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    95@10V
  • Typical Gate Charge @ Vgs (nC)
    15.3@10V
  • Typical Gate Charge @ 10V (nC)
    15.3
  • Typical Input Capacitance @ Vds (pF)
    700@30V
  • Maximum Power Dissipation (mW)
    5000
  • Typical Fall Time (ns)
    33
  • Typical Rise Time (ns)
    24
  • Typical Turn-Off Delay Time (ns)
    26
  • Typical Turn-On Delay Time (ns)
    8
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1(Max)
  • Package Width
    1.65
  • Package Length
    3.05
  • PCB changed
    6
  • Standard Package Name
    SO
  • Supplier Package
    TSOP
  • Pin Count
    6
  • Lead Shape
    Gull-wing

Documentazione e Risorse

Schede tecniche
Risorse di progettazione