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MOSFET

SI7997DP-T1-GE3

Trans MOSFET P-CH 30V 60A 8-Pin PowerPAK SO EP T/R

Vishay
Schede tecniche 

Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant with Exemption
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    8541.29.00.55
  • SVHC
    Yes
  • Tasso di SVHC superiore ai limiti consentiti
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Dual Dual Drain
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    60
  • Maximum Drain-Source Resistance (mOhm)
    5.5@10V
  • Typical Gate Charge @ Vgs (nC)
    51@4.5V|106@10V
  • Typical Gate Charge @ 10V (nC)
    106
  • Typical Input Capacitance @ Vds (pF)
    6200@15V
  • Maximum Power Dissipation (mW)
    3500
  • Typical Fall Time (ns)
    40
  • Typical Rise Time (ns)
    50|10
  • Typical Turn-Off Delay Time (ns)
    80|115
  • Typical Turn-On Delay Time (ns)
    15|60
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.07(Max)
  • Package Width
    5.89
  • Package Length
    4.9
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    PowerPAK SO EP
  • Pin Count
    8
  • Lead Shape
    No Lead
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Documentazione e Risorse

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Risorse di progettazione