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SI3443CDVT1GE3|VISHAY|simage
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MOSFET

SI3443CDV-T1-GE3

Trans MOSFET P-CH 20V 5.97A 6-Pin TSOP T/R

Vishay
Schede tecniche 

Specifiche Tecniche del Prodotto
  • 유럽 연합 RoHS 명령어
    Compliant
  • 미국수출통제분류ECCN 인코딩
    EAR99
  • 친환경 무연
    NRND
  • 미국 세관 상품 코드
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain
  • Process Technology
    0.18um
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±12
  • Maximum Gate Threshold Voltage (V)
    1.5
  • Maximum Continuous Drain Current (A)
    5.97
  • Maximum Drain-Source Resistance (mOhm)
    60@4.5V
  • Typical Gate Charge @ Vgs (nC)
    7.53@4.5V|8.26@5V
  • Typical Gate to Drain Charge (nC)
    2.37
  • Typical Gate to Source Charge (nC)
    1.53
  • Typical Reverse Recovery Charge (nC)
    9
  • Typical Input Capacitance @ Vds (pF)
    610@10V
  • Typical Output Capacitance (pF)
    132
  • Maximum Power Dissipation (mW)
    2000
  • Typical Fall Time (ns)
    11
  • Typical Rise Time (ns)
    59
  • Typical Turn-Off Delay Time (ns)
    30
  • Typical Turn-On Delay Time (ns)
    27
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    50@4.5V|69.2@2.7V|83@2.5V
  • Mounting
    Surface Mount
  • Package Height
    1(Max)
  • Package Width
    1.65
  • Package Length
    3.05
  • PCB changed
    6
  • Standard Package Name
    SO
  • Supplier Package
    TSOP
  • Pin Count
    6
  • Lead Shape
    Gull-wing

Documentazione e Risorse

Schede tecniche
Risorse di progettazione