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MOSFET

RS6R060BHTB1

Trans MOSFET N-CH 150V 60A 8-Pin HSOP EP T/R

ROHM Semiconductor
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Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant with Exemption
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    8541.29.00.55
  • SVHC
    Yes
  • Tasso di SVHC superiore ai limiti consentiti
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    150
  • Maximum Gate-Source Voltage (V)
    ±20
  • Operating Junction Temperature (°C)
    150
  • Maximum Continuous Drain Current (A)
    60
  • Maximum Drain-Source Resistance (mOhm)
    21.8@10V
  • Typical Gate Charge @ Vgs (nC)
    30@6V|46@10V
  • Typical Gate Charge @ 10V (nC)
    46
  • Typical Input Capacitance @ Vds (pF)
    2750@75V
  • Maximum Power Dissipation (mW)
    3000
  • Typical Fall Time (ns)
    25
  • Typical Rise Time (ns)
    15
  • Typical Turn-Off Delay Time (ns)
    58
  • Typical Turn-On Delay Time (ns)
    24
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.05(Max)
  • Package Width
    5.8(Max)
  • Package Length
    5(Max)
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    HSOP EP
  • Pin Count
    8

Documentazione e Risorse

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Risorse di progettazione