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MSD42WT1G|ONSEMI|simage
MSD42WT1G|ONSEMI|limage
BJT GP

MSD42WT1G

Trans GP BJT NPN 300V 0.15A 450mW 3-Pin SC-70 T/R

onsemi
Schede tecniche 

Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    8541.21.00.95
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Small Signal
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    300
  • Maximum Collector-Emitter Voltage (V)
    300
  • Maximum Base-Emitter Voltage (V)
    6
  • Operating Junction Temperature (°C)
    150
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.5@2mA@20mA
  • Maximum DC Collector Current (A)
    0.15
  • Minimum DC Current Gain
    40@30mA@10V|25@1mA@10V
  • Maximum Power Dissipation (mW)
    450
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.85 mm
  • Package Width
    1.24 mm
  • Package Length
    2 mm
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SC-70
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentazione e Risorse

Schede tecniche
Risorse di progettazione