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M470L6524DU0-CB3

DRAM Module DDR SDRAM 512Mbyte 200USODIMM

Samsung Electronics
Schede tecniche 

Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant
  • ECCN (Stati Uniti)
    4A994a.
  • Stato del componente
    Obsolete
  • Automotive
    No
  • PPAP
    No
  • Module
    DRAM
  • Subcategory
    DDR SDRAM
  • Module Density
    512Mbyte
  • Organization
    64Mx64
  • Module Type
    200USODIMM
  • Number of Chip per Module
    8
  • Chip Density (bit)
    512M
  • Data Bus Width (bit)
    64
  • Max. Access Time (ns)
    0.7
  • Maximum Clock Rate (MHz)
    333
  • Chip Configuration
    32Mx16
  • Chip Package Type
    66TSOP-II
  • Minimum Operating Supply Voltage (V)
    2.3
  • Typical Operating Supply Voltage (V)
    2.5
  • Maximum Operating Supply Voltage (V)
    2.7
  • Operating Current (mA)
    1000
  • Minimum Operating Temperature (°C)
    0
  • Maximum Operating Temperature (°C)
    70
  • Supplier Temperature Grade
    Commercial
  • Module Sides
    Double
  • ECC Support
    No
  • Number of Ranks
    Dual
  • CAS Latency
    2.5
  • PLL
    No
  • SPD EEPROM Support
    Yes
  • Self Refresh
    Yes
  • Refresh Cycles
    8K
  • Mounting
    Socket
  • Package Height
    31.75
  • Package Width
    3.8(Max)
  • Package Length
    67.6
  • PCB changed
    200
  • Standard Package Name
    SOD
  • Supplier Package
    USODIMM
  • Pin Count
    200
  • Lead Shape
    No Lead

Documentazione e Risorse

Schede tecniche
Risorse di progettazione