Chip DRAM

K4B4G1646D-BYK0

DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.35V/1.5V 96-Pin FBGA

Samsung Electronics

Specifiche Tecniche del Prodotto

• RoHS (Unione Europea)

  Compliant

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Obsolete

• Codice HTS

  8542.32.00.36

• Automotive

  No

• PPAP

  No

• DRAM Type

  DDR3 SDRAM

• Chip Density (bit)

  4G

• Organization

  256Mx16

• Number of Internal Banks

  8

• Number of Words per Bank

  32M

• Number of Bits/Word (bit)

  16

• Data Bus Width (bit)

  16

• Maximum Clock Rate (MHz)

  1600

• Maximum Access Time (ns)

  0.225

• Address Bus Width (bit)

  18

• Minimum Operating Supply Voltage (V)

  1.283|1.425

• Maximum Operating Supply Voltage (V)

  1.45|1.575

• Operating Current (mA)

  118

• Minimum Operating Temperature (°C)

  0

• Maximum Operating Temperature (°C)

  95

• Supplier Temperature Grade

  Commercial

• Number of I/O Lines (bit)

  16

• Mounting

  Surface Mount

• Package Height

  0.75

• Package Width

  7.5

• Package Length

  13.3

• PCB changed

  96

• Standard Package Name

  BGA

• Supplier Package

  FBGA

• Pin Count

  96

• Lead Shape

  Ball