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BJT GP

JANS2N2369AUB

Trans GP BJT NPN 15V 360mW 4-Pin Case UB Waffle

Microchip Technology
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Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    8541.21.00.75
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    40
  • Maximum Collector-Emitter Voltage (V)
    15
  • Maximum Base-Emitter Voltage (V)
    4.5
  • Maximum Base-Emitter Saturation Voltage (V)
    0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA
  • Maximum Collector Cut-Off Current (nA)
    10000
  • Minimum DC Current Gain
    40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V
  • Maximum Power Dissipation (mW)
    360
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Packaging
    Waffle
  • Supplier Temperature Grade
    Military
  • Mounting
    Surface Mount
  • Package Height
    1.42(Max)
  • Package Width
    2.74(Max)
  • Package Length
    3.25(Max)
  • PCB changed
    4
  • Supplier Package
    Case UB
  • Pin Count
    4
Quantità Ordine

Documentazione e Risorse

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Risorse di progettazione