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IXXH50N60B3D1|IXYS|simage
IXXH50N60B3D1|IXYS|limage
IGBT Chip

IXXH50N60B3D1

Trans IGBT Chip N-CH 600V 120A 600W 3-Pin(3+Tab) TO-247AD

IXYS
Schede tecniche 

Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant with Exemption
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • SVHC
    Yes
  • Tasso di SVHC superiore ai limiti consentiti
    Yes
  • Automotive
    No
  • PPAP
    No
  • Technology
    XPT
  • Channel Type
    N
  • Configuration
    Single
  • Maximum Gate Emitter Voltage (V)
    ±20
  • Maximum Collector-Emitter Voltage (V)
    600
  • Typical Collector-Emitter Saturation Voltage (V)
    1.55
  • Maximum Continuous DC Collector Current (A)
    120
  • Maximum Gate Emitter Leakage Current (uA)
    0.1
  • Maximum Power Dissipation (mW)
    600
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Mounting
    Through Hole
  • Package Height
    21.46(Max)
  • Package Width
    5.3(Max)
  • Package Length
    16.26(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-247AD
  • Pin Count
    3

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Documentazione e Risorse

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