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IXFT6N100F|IXYS|simage
IXFT6N100F|IXYS|limage
MOSFET

IXFT6N100F

Trans MOSFET N-CH 1KV 6A 3-Pin(2+Tab) TO-268

IXYS
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Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant with Exemption
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    COMPONENTS
  • SVHC
    Yes
  • Tasso di SVHC superiore ai limiti consentiti
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    1000
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    6
  • Maximum Drain-Source Resistance (mOhm)
    1900@10V
  • Typical Gate Charge @ Vgs (nC)
    54@10V
  • Typical Gate Charge @ 10V (nC)
    54
  • Typical Input Capacitance @ Vds (pF)
    1870@25V
  • Maximum Power Dissipation (mW)
    180000
  • Typical Fall Time (ns)
    14
  • Typical Rise Time (ns)
    14
  • Typical Turn-Off Delay Time (ns)
    32
  • Typical Turn-On Delay Time (ns)
    12
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Surface Mount
  • Package Height
    5.1(Max)
  • Package Width
    14(Max)
  • Package Length
    16.05(Max)
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-268
  • Pin Count
    3

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Documentazione e Risorse

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