Memorie Flash

IS25LP512M-JLLE-TR

NOR Flash Serial (SPI, Dual SPI, Quad SPI) 2.5V/3V/3.3V 512M-bit 64M x 8 7.5ns 8-Pin WSON EP T/R

Integrated Silicon Solution Inc

Specifiche Tecniche del Prodotto

• RoHS (Unione Europea)

  Compliant

• ECCN (Stati Uniti)

  3A991b.1.a.

• Stato del componente

  Active

• Codice HTS

  8542.32.00.71

• Automotive

  No

• PPAP

  No

• Cell Type

  NOR

• Chip Density (bit)

  512M

• Architecture

  Sectored

• Boot Block

  No

• Block Organization

  Symmetrical

• Address Width (bit)

  32

• Sector Size

  4Kbyte x 16384

• Page Size

  256byte|512byte

• Number of Bits/Word (bit)

  8

• Number of Words

  64M

• Programmability

  Yes

• Timing Type

  Synchronous

• Max. Access Time (ns)

  7.5

• Maximum Erase Time (s)

  270/Chip

• Maximum Programming Time (ms)

  2/Page

• Interface Type

  Serial (SPI, Dual SPI, Quad SPI)

• Minimum Operating Supply Voltage (V)

  2.3

• Typical Operating Supply Voltage (V)

  2.5|3|3.3

• Maximum Operating Supply Voltage (V)

  3.6

• Programming Voltage (V)

  2.3 to 3.6

• Operating Current (mA)

  80

• Program Current (mA)

  35

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  105

• Supplier Temperature Grade

  Extended

• Command Compatible

  Yes

• ECC Support

  No

• Support of Page Mode

  No

• Minimum Endurance (Cycles)

  100000

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  0.73 mm

• Package Width

  8 mm

• Package Length

  6 mm

• PCB changed

  8

• Standard Package Name

  SON

• Supplier Package

  WSON EP

• Pin Count

  8