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MOSFET

IRLML6401TRPBF

Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23 T/R

Infineon Technologies AG
Schede tecniche 

The ON Semiconductor MOSFET is a P channel MOSFET transistor. Its maximum power dissipation is 1300 mW. The maximum Drain Source Voltage of the product is 12 V and Gate Source Voltage is ±8 V. This MOSFET has an operating temperature range of -55°C to 150°C.

Features and Benefits:
• Ultra Low On-Resistance
• P-Channel MOSFET
• SOT-23 Footprint
• Low Profile
• Fast Switching
• Lead-Free
• RoHS Compliant
• Halogen-Free

Application:
• Portable electronics
• PCMCIA cards

Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Obsolete
  • Codice HTS
    8541.29.00.55
  • SVHC
    Yes
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    12
  • Maximum Gate-Source Voltage (V)
    ±8
  • Maximum Gate Threshold Voltage (V)
    0.95
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    4.3
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    50@4.5V
  • Typical Gate Charge @ Vgs (nC)
    10@5V
  • Typical Gate to Drain Charge (nC)
    2.6
  • Typical Gate to Source Charge (nC)
    1.4
  • Typical Reverse Recovery Charge (nC)
    8
  • Typical Input Capacitance @ Vds (pF)
    830@10V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    125@10V
  • Minimum Gate Threshold Voltage (V)
    0.4
  • Typical Output Capacitance (pF)
    180
  • Maximum Power Dissipation (mW)
    1300
  • Typical Fall Time (ns)
    210
  • Typical Rise Time (ns)
    32
  • Typical Turn-Off Delay Time (ns)
    250
  • Typical Turn-On Delay Time (ns)
    11
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    75@2V, 47@3V, 39@4V, 34.5@5V, 33@6V, 32@7V
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    34
  • Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    100
  • Typical Gate Plateau Voltage (V)
    1.7
  • Typical Reverse Recovery Time (ns)
    22
  • Maximum Diode Forward Voltage (V)
    1.2
  • Typical Gate Threshold Voltage (V)
    0.55
  • Maximum Positive Gate-Source Voltage (V)
    8
  • Mounting
    Surface Mount
  • Package Height
    0.95
  • Package Width
    1.3
  • Package Length
    2.92
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23
  • Pin Count
    3
  • Lead Shape
    Gull-wing

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