Specifiche Tecniche del Prodotto
RoHS (Unione Europea)
Compliant with Exemption
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.10.00.80
SVHC
Yes
Tasso di SVHC superiore ai limiti consentiti
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
400
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
10
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
25
Maximum Drain-Source Resistance (mOhm)
550@10V
Typical Gate Charge @ Vgs (nC)
63(Max)@10V
Typical Gate Charge @ 10V (nC)
63(Max)
Typical Gate to Drain Charge (nC)
32(Max)
Typical Gate to Source Charge (nC)
9(Max)
Typical Reverse Recovery Charge (nC)
3800
Typical Input Capacitance @ Vds (pF)
1400@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
120@25V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
330
Maximum Power Dissipation (mW)
3100
Typical Fall Time (ns)
24
Typical Rise Time (ns)
27
Typical Turn-Off Delay Time (ns)
50
Typical Turn-On Delay Time (ns)
14
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Maximum Pulsed Drain Current @ TC=25°C (A)
40
Typical Reverse Recovery Time (ns)
370
Maximum Diode Forward Voltage (V)
2
Minimum Gate Resistance (Ohm)
0.8
Maximum Gate Resistance (Ohm)
5.9
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Surface Mount
Package Height
4.83(Max)
Package Width
9.65(Max)
Package Length
10.41(Max)
PCB changed
2
Tab
Tab
Standard Package Name
TO
Supplier Package
D2PAK
Pin Count
3