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MOSFET

IQFH55N04NM6ATMA1

Trans MOSFET N-CH 40V 53A 12-Pin TSON EP T/R

Infineon Technologies AG
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Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant with Exemption
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    EA
  • SVHC
    Yes
  • Tasso di SVHC superiore ai limiti consentiti
    Yes
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single Hex Drain Quint Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    40
  • Maximum Gate-Source Voltage (V)
    20
  • Operating Junction Temperature (°C)
    -55 to 175
  • Maximum Continuous Drain Current (A)
    53
  • Maximum Drain-Source Resistance (mOhm)
    0.55@10V
  • Typical Gate Charge @ Vgs (nC)
    118@10V
  • Typical Input Capacitance @ Vds (pF)
    8200@20V
  • Maximum Power Dissipation (mW)
    3000
  • Typical Fall Time (ns)
    15
  • Typical Rise Time (ns)
    92
  • Typical Turn-Off Delay Time (ns)
    44
  • Typical Turn-On Delay Time (ns)
    14
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Mounting
    Surface Mount
  • Package Height
    1.05(Max)
  • Package Width
    6
  • Package Length
    8
  • PCB changed
    12
  • Supplier Package
    TSON EP
  • Pin Count
    12
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Documentazione e Risorse

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