MOSFET

IPG20N10S4L35ATMA1

Trans MOSFET N-CH 100V 20A 8-Pin TDSON EP T/R Automotive AEC-Q101

Infineon Technologies AG

Specifiche Tecniche del Prodotto

• RoHS (Unione Europea)

  Compliant with Exemption

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  Active

• Codice HTS

  8541.29.00.55

• SVHC

  Yes

• Tasso di SVHC superiore ai limiti consentiti

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Dual Dual Drain

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  2

• Maximum Drain-Source Voltage (V)

  100

• Maximum Gate-Source Voltage (V)

  ±16

• Maximum Gate Threshold Voltage (V)

  2.1

• Maximum Continuous Drain Current (A)

  20

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  35@10V

• Typical Gate Charge @ Vgs (nC)

  13.4@10V

• Typical Gate Charge @ 10V (nC)

  13.4

• Typical Input Capacitance @ Vds (pF)

  850@25V

• Maximum Power Dissipation (mW)

  43000

• Typical Fall Time (ns)

  13

• Typical Rise Time (ns)

  2

• Typical Turn-Off Delay Time (ns)

  18

• Typical Turn-On Delay Time (ns)

  3

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  29@10V|38@4.5V

• Mounting

  Surface Mount

• Package Height

  1

• Package Width

  5.9

• Package Length

  5.15

• PCB changed

  8

• Standard Package Name

  SON

• Supplier Package

  TDSON EP

• Pin Count

  8

• Lead Shape

  No Lead