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MOSFET

IPB031N08N5ATMA1

Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R

Infineon Technologies AG
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Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant with Exemption
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    8541.29.00.55
  • SVHC
    Yes
  • Tasso di SVHC superiore ai limiti consentiti
    Yes
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    80
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Gate Threshold Voltage (V)
    3.8
  • Operating Junction Temperature (°C)
    -55 to 175
  • Maximum Continuous Drain Current (A)
    120
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    3.1@10V
  • Typical Gate Charge @ Vgs (nC)
    69@10V
  • Typical Gate Charge @ 10V (nC)
    69
  • Typical Gate to Drain Charge (nC)
    15
  • Typical Gate to Source Charge (nC)
    24
  • Typical Reverse Recovery Charge (nC)
    166
  • Typical Switch Charge (nC)
    26
  • Typical Input Capacitance @ Vds (pF)
    4800@40V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    36@40V
  • Minimum Gate Threshold Voltage (V)
    2.2
  • Typical Output Capacitance (pF)
    790
  • Maximum Power Dissipation (mW)
    167000
  • Typical Fall Time (ns)
    12
  • Typical Rise Time (ns)
    18
  • Typical Turn-Off Delay Time (ns)
    37
  • Typical Turn-On Delay Time (ns)
    18
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    2.7@10V|3.6@6V
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    480
  • Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    40
  • Typical Diode Forward Voltage (V)
    0.94
  • Typical Gate Plateau Voltage (V)
    5
  • Typical Reverse Recovery Time (ns)
    73
  • Maximum Diode Forward Voltage (V)
    1.2
  • Typical Gate Threshold Voltage (V)
    3
  • Maximum Gate Resistance (Ohm)
    2.3
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Mounting
    Surface Mount
  • Package Height
    4.4
  • Package Width
    9.25
  • Package Length
    10
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    D2PAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing
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Documentazione e Risorse

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