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IKW30N60H3FKSA1|INFINEON|limage
IKW30N60H3FKSA1|INFINEON|simage
IGBT Chip

IKW30N60H3FKSA1

Trans IGBT Chip N-CH 600V 60A 187W 3-Pin(3+Tab) TO-247 Tube

Infineon Technologies AG
Schede tecniche 

Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    8541.29.00.55
  • Automotive
    Yes
  • PPAP
    Unknown
  • Channel Type
    N
  • Configuration
    Single
  • Maximum Gate Emitter Voltage (V)
    ±20
  • Maximum Collector-Emitter Voltage (V)
    600
  • Typical Collector-Emitter Saturation Voltage (V)
    1.95
  • Maximum Continuous DC Collector Current (A)
    60
  • Maximum Gate Emitter Leakage Current (uA)
    0.1
  • Maximum Power Dissipation (mW)
    187
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tube
  • Mounting
    Through Hole
  • Package Height
    20.95
  • Package Width
    5.03
  • Package Length
    15.9
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-247
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentazione e Risorse

Schede tecniche
Risorse di progettazione