Specifiche Tecniche del Prodotto
RoHS (Unione Europea)
Compliant with Exemption
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
8541.29.00.55
SVHC
Yes
Tasso di SVHC superiore ai limiti consentiti
Yes
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single Quint Drain Quad Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
80
Maximum Gate-Source Voltage (V)
±20
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
186
Maximum Drain-Source Resistance (mOhm)
2.44@10V
Typical Gate Charge @ Vgs (nC)
54@10V
Typical Gate Charge @ 10V (nC)
54
Typical Input Capacitance @ Vds (pF)
3730@40V
Maximum Power Dissipation (mW)
157000
Typical Fall Time (ns)
16
Typical Rise Time (ns)
16
Typical Turn-Off Delay Time (ns)
21
Typical Turn-On Delay Time (ns)
12
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Supplier Temperature Grade
Automotive
Quantità Ordine