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Specifiche Tecniche del Prodotto
RoHS (Unione Europea)
Compliant
ECCN (Stati Uniti)
EAR99
Stato del componente
Active
Codice HTS
EA
SVHC
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
GaN
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
650
Maximum Gate-Source Voltage (V)
7
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
29
Maximum Drain-Source Resistance (mOhm)
80@6V
Typical Gate Charge @ Vgs (nC)
6.2@6V
Typical Input Capacitance @ Vds (pF)
225@400V
Maximum Power Dissipation (mW)
240000
Typical Fall Time (ns)
4
Typical Rise Time (ns)
4
Typical Turn-Off Delay Time (ns)
5
Typical Turn-On Delay Time (ns)
3
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
0.88
Package Width
8
Package Length
8
PCB changed
8
Standard Package Name
DFN
Supplier Package
DFN EP
Pin Count
8
Family/Series
GAN080-650EBE
ALIAS
9346 659 01332
ROHS Version
2011/65/EU, 2015/863
MSL
3
Quantità Ordine