moduli IGBT

FS100R12KT4GBOSA1

Trans IGBT Module N-CH 1200V 100A 515W 35-Pin ECONO3-4 Tray

Infineon Technologies AG

Product Technical Specifications

• RoHS (Unione Europea)

  Compliant

• ECCN (Stati Uniti)

  EAR99

• Stato del componente

  NRND

• Codice HTS

  8541.29.00.55

• SVHC

  Yes

• Automotive

  No

• PPAP

  No

• Channel Type

  N

• Configuration

  Hex

• Typical Collector-Emitter Saturation Voltage (V)

  1.75

• Maximum Collector-Emitter Voltage (V)

  1200

• Maximum Power Dissipation (mW)

  515

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Continuous DC Collector Current (A)

  100

• Maximum Gate Emitter Leakage Current (uA)

  0.1

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tray

• Mounting

  Screw

• Package Height

  17

• Package Width

  62.5

• Package Length

  122

• PCB changed

  35

• Supplier Package

  ECONO3-4

• Pin Count

  35