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FQB55N10TM|ONSEMI|simage
FQB55N10TM|ONSEMI|limage
MOSFET

FQB55N10TM

Trans MOSFET N-CH 100V 55A 3-Pin(2+Tab) D2PAK T/R

onsemi
Schede tecniche 

Specifiche Tecniche del Prodotto
  • RoHS (Unione Europea)
    Compliant with Exemption
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active
  • Codice HTS
    COMPONENTS
  • SVHC
    Yes
  • Tasso di SVHC superiore ai limiti consentiti
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Process Technology
    0.18um to 2um
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    100
  • Maximum Gate-Source Voltage (V)
    ±25
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    55
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    26@10V
  • Typical Gate Charge @ Vgs (nC)
    75@10V
  • Typical Gate Charge @ 10V (nC)
    75
  • Typical Input Capacitance @ Vds (pF)
    2100@25V
  • Maximum Power Dissipation (mW)
    3750
  • Typical Fall Time (ns)
    140
  • Typical Rise Time (ns)
    250
  • Typical Turn-Off Delay Time (ns)
    110
  • Typical Turn-On Delay Time (ns)
    25
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    4.83(Max)
  • Package Width
    9.65(Max)
  • Package Length
    10.67(Max)
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    D2PAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing
Quantità Ordine

Documentazione e Risorse

Schede tecniche
Risorse di progettazione